---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-116                       OK (0x48B5)
# of bytes written to SDRAM EEPROM              176
Total number of bytes in EEPROM                 256
Fundamental Memory type                         DDR3 SDRAM
Module Type                                     UDIMM

---=== Memory Characteristics ===---
Fine time base                                  1.000 ps
Medium time base                                0.125 ns
Maximum module speed                            1600MHz (PC3-12800)
Size                                            4096 MB
Banks x Rows x Columns x Bits                   8 x 15 x 10 x 64
Ranks                                           2
SDRAM Device Width                              8 bits
tCL-tRCD-tRP-tRAS                               10-10-10-28
Supported CAS Latencies (tCL)                   11T, 10T, 9T, 8T, 7T, 6T

---=== Timing Parameters ===---
Minimum Write Recovery time (tWR)               15.000 ns
Minimum Row Active to Row Active Delay (tRRD)   6.000 ns
Minimum Active to Auto-Refresh Delay (tRC)      48.125 ns
Minimum Recovery Delay (tRFC)                   160.000 ns
Minimum Write to Read CMD Delay (tWTR)          7.500 ns
Minimum Read to Pre-charge CMD Delay (tRTP)     7.500 ns
Minimum Four Activate Window Delay (tFAW)       30.000 ns

---=== Optional Features ===---
Operable voltages                               1.5V, 1.35V 
RZQ/6 supported?                                Yes
RZQ/7 supported?                                Yes
DLL-Off Mode supported?                         Yes
Operating temperature range                     0-95C
Refresh Rate in extended temp range             1X
Auto Self-Refresh?                              No
On-Die Thermal Sensor readout?                  No
Partial Array Self-Refresh?                     No
Thermal Sensor Accuracy                         Not implemented
SDRAM Device Type                               Standard Monolithic

---=== Physical Characteristics ===---
Module Height (mm)                              19
Module Thickness (mm)                           2 front, 2 back
Module Width (mm)                               133.5
Module Reference Card                           B

---=== Manufacturer Data ===---
Module Manufacturer                             Samsung
DRAM Manufacturer                               Samsung
Manufacturing Location Code                     0x01
Manufacturing Date                              2012-W29
Assembly Serial Number                          0x239EE684
Part Number                                     M379B5273DH0-YK0  

tCAS in ns = (CAS*2000)/DDR3memfreq

tburst in ns = (4*2000)/DDR3memfreq
9 + 9 + 4.287 = 22.287
CL + tRCD + tburst = tRAS
tRAS + tRP = rct
23 + 9 = 32
tCCD <= tburst
tCCD == 4 ?
Write to precharge = tCL - 1 +(Burst Legnth / 2)+tWTR
22 = 9 - 1 + 4 + 10

CL   9
tRCD 9
tRP  9
tRAS 24
tWtR 5
trfc 90
wrt  10
pt   5
rct  33
rrd  4
fact 20

CL   9
tRCD 9
tRP  9
tRAS 23
tWtR 4
trfc 90
wrt  8
pt   4
rct  32
rrd  4
fact 18

CL   9
tRCD 9
tRP  9
tRAS 23
tWtR 4
trfc 90
wrt  6
pt   4
rct  32
rrd  4
fact 16


CL
tRCD
tRP
tRAS
tWtR
trfc
wrt
pt
rct
rrd
fact